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silicon phosphide is a two-dimensional semiconducting semiconductor that has been studied for its potential in electronic, energy storage, and biomedical applications. It has a wide range of properties, including thermal stability, chemical resistance, and high mechanical strength.

It is widely used in laser and other photo diodes because of its high power, high frequency properties. It is also used in energy storage devices, such as lithium-ion batteries.

In addition to its electrical, mechanical, and chemical properties, silicon phosphide has antioxidant and anti-inflammatory properties that can improve cell health. These characteristics make it a promising material for medical and research applications.

Synthesis of silicon phosphide from precursor solutions can be performed by sol-gel or hydrothermal methods. Other methods include solid-state reactions, which use a combination of high pressure and temperature to produce the material.

SiP is a layered material that crystallizes in a C2/m (2D anisotropic) structure with a band gap of 1.69 eV in bulk and 2.5 eV in monolayer. It has been shown to undergo indirect (bulk) to direct (monolayer) gap transition, which is a common feature of semiconductors with layered structures.

This band gap transition can be tuned by carrier doping and may lead to a change in the electron density, which is known as half-metallicity. This process is similar to that of bipolar magnetic semiconductors and low-dimensional half-semiconductors 40.

Stable or metastable two-dimensional earth-abundant semiconductors are of great interest and may affect future electronic technologies. Here, we combine global structural prediction and first-principles calculations to discover several semiconducting silicon phosphide monolayers that can be formed stably at the stoichiometries of y/x>=1. These compounds, which have lower formation enthalpies than known allotropes, exhibit remarkable electronic and optical band gaps in an extremely wide range (0Eg3 eV). They are also compatible with vapor-based growth.